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A self-consistent numerical method for simulation of quantum transport in high electron mobility transistor; part I: The Boltzmann-Poisson-Schrödinger solver

机译：一种高电子迁移率晶体管中量子输运的自洽数值方法；第一部分：玻尔兹曼-泊松-薛定ding求解器

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R. Khoie;
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年度 1996
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1. A self-consistent numerical method for simulation of quantum transport in high electron mobility transistor; part I: The Boltzmann-Poisson-Schr?dinger solver [J] . R.Khoie Mathematical Problems in Engineering: Theory, Methods and Applications . 1996,第3期

机译：一种高电子迁移率晶体管中量子输运的自洽数值方法;第一部分：Boltzmann-Poisson-Schr？dinger求解器
2. A self-consistent numerical method for simulation of quantum transport in high electron mobility transistor; part II: The full quantum transport [J] . R.Khoie Mathematical Problems in Engineering: Theory, Methods and Applications . 1996,第3期

机译：一种高电子迁移率晶体管中量子输运的自洽数值方法;第二部分：全量子传输
3. COMPUTER SIMULATION OF QUANTUM TRANSPORT IN HIGH ELECTRON MOBILITY TRANSISTOR PART 1: THE BOLTZMANN-POISSON-SCHROEDINGER SOLVER [J] . R. Khoie Transactions of the Society for Modeling and Simulation International . 1995,第1期

机译：高电子迁移率晶体管中量子输运的计算机模拟：第1部分：Boltzmann-Poisson-Schroedinger求解器
4. Numerical Simulation of Plasma Waves in High-Electron-Mobility Transistors Using Kinetic Transport Model [C] . Satou A., Ryzhii V., Vagidov N., Computational Electronics, 2009. IWCE '09 . 2009

机译：基于电子传输模型的高电子迁移率晶体管中等离子体波的数值模拟
5. Modeling and Design of GaN High Electron Mobility Transistors and Hot Electron Transistors through Monte Carlo Particle-based Device Simulations. [D] . Soligo, Riccardo. 2016

机译：通过基于Monte Carlo粒子的器件仿真对GaN高电子迁移率晶体管和热电子晶体管进行建模和设计。
6. 3-D Quantum Transport Solver Based on the Perfectly Matched Layer and Spectral Element Methods for the Simulation of Semiconductor Nanodevices [O] . Candong Cheng, Joon-Ho Lee, Kim Hwa Lim, -1

机译：基于完美匹配层和光谱元素方法的3D量子传输解算器用于半导体纳米器件的仿真
7. A self-consistent numerical method for simulation of quantum transport in high electron mobility transistor; part I: The Boltzmann-Poisson-Schrödinger solver [O] . R. Khoie 1996

机译：一种用于模拟高电子迁移率晶体管中量子迁移的自洽数值方法;第一部分：Boltzmann-poisson-schrödinger求解器
8. Analytical and numerical study of GaAs/AlGaAs based multiple quantum wells heigh electron mobility transistors (HEMTs) [R] . Nawaz, M, Jensen, GU 1995

机译：基于Gaas / alGaas的多量子阱高电子迁移率晶体管（HEmT）的分析和数值研究

A self-consistent numerical method for simulation of quantum transport in high electron mobility transistor; part I: The Boltzmann-Poisson-Schrödinger solver

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